V
SM
I
T(AV)M
I
T(RMS)
I
TSM
V
T0
r
T
=
=
=
=
=
=
5200 V
1980 A
3100 A
42×10 A
1.06 V
0.219 mΩ
Ω
Bi-Directional Control Thyristor
5STB 25U5200
Preliminary
Doc. No. 5SYA1038-02 Jul. 03
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•
•
•
•
Two thyristors integrated into one wafer
Patented free-floating silicon technology
Designed for energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking
Maximum rated values
1)
Symbol
V
SM
V
RM
dV/dt
crit
Parameter
Conditions
f = 5 Hz, t
p
= 10 ms
f = 50 Hz, t
p
= 10 ms
Exp. to 0.67 x V
RM
, T
vj
= 110°C
Symbol Conditions
5STB 25U5200
5200 V
4400 V
5STB 25U5000 5STB 25U4600
5000 V
4200 V
2000 V/µs
min
typ
max
400
Unit
mA
4600 V
4000 V
Characteristic values
Max. leakage current
I
RM
V
RM
, T
vj
= 110°C
V
RM
is equal to the V
SM
value up to T
j
= 95 °C
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
120
typ
135
max
160
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
2
2
Parameter
Weight
Surface creepage distance
Symbol Conditions
m
D
S
min
53
typ
max
3.6
Air strike distance
D
a
22
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
