V
DRM
I
T(AV)M
I
T(RMS)
I
TSM
V
(T0)
r
T
=
=
=
=
=
=
2800
793
1246
10.6×10
3
1.024
0.51
V
A
A
A
V
mΩ
Phase Control Thyristor
5STP 08D2801
Doc. No. 5SYA1060-01 March 05
•
•
•
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Blocking
Maximum rated values
1)
Symbol
V
DRM,
V
RRM
dV/dt
crit
Parameter
Conditions
f = 50 Hz, t
p
= 10 ms
Exp. to 1880 V, T
vj
= 125°C
Symbol Conditions
I
DRM
I
RRM
5STP 08D2801 5STP 08D2601
2800 V
2600 V
1000 V/µs
min
typ
5STP 08D2401
2400 V
Characteristic values
max
70
70
Unit
mA
mA
Forward leakage current
Reverse leakage current
V
DRM
, T
vj
= 125°C
V
RRM
, T
vj
= 125°C
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
8
typ
10
max
12
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
2
2
Parameter
Weight
Surface creepage distance
Symbol Conditions
m
D
S
min
25
typ
max
0.26
Air strike distance
D
a
14
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
