V
DSM
I
TAVM
I
TRMS
I
TSM
V
T0
r
T
=
=
=
=
=
=
4200 V
1150 A
1800 A
15000 A
0.95 V
0.575 mΩ
Ω
Phase Control Thyristor
5STP 12F4200
Doc. No. 5SYA1021-03 Jan. 02
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Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Blocking
Maximum rated values
1)
Symbol
V
DRM,
V
RRM
V
RSM
dV/dt
crit
Parameter
Conditions
f = 50 Hz, t
p
= 10 ms
t
p
= 5 ms, single pulse
Exp. to 0.67 x V
DRM
, T
vj
= 125°C
5STP 12F4200
4200 V
4600 V
5STP 12F4000
4000 V
4400 V
1000 V/µs
min
typ
5STP 12F3600
3600 V
4000 V
Characteristic values
Symbol Conditions
I
DRM
I
RRM
V
DRM
, T
vj
= 125°C
V
RRM
, T
vj
= 125°C
max
200
200
Unit
mA
mA
Forward leakage current
Reverse leakage current
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
14
typ
22
max
24
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
2
2
Parameter
Weight
Surface creepage distance
Air strike distance
Symbol Conditions
m
D
S
D
a
min
25
14
typ
0.6
max
1)
Maximum ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.