V
DRM
V
DSM
I
T(AV)M
I
T(RMS)
I
TSM
V
(T0)
r
T
=
=
=
=
=
=
=
8000
8500
1200
1880
35×10
3
1.25
0.48
V
V
A
A
A
V
mΩ
Phase Control Thyristor
5STP 12N8500
Doc. No. 5SYA1044-02 Nov. 04
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•
•
•
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Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol
V
DSM,
V
RSM
V
DRM,
V
RRM
V
RSM
dV/dt
crit
Parameter
Conditions
f = 5 Hz, t
p
= 10 ms
f = 50 Hz, t
p
= 10 ms
t
p
= 5 ms, single pulse
Exp. to 5360 V, T
vj
= 90°C
Symbol Conditions
I
DSM
I
RSM
5STP 12N8500 5STP 12N8200
8500 V
8000 V
9000 V
8200 V
7700 V
8600 V
2000 V/µs
min
typ
5STP 12N7800
7800 V
7300 V
8200 V
Characteristic values
max
1000
400
Unit
mA
mA
Forward leakage current
Reverse leakage current
V
DSM
, T
vj
= 90°C
V
RSM
, T
vj
= 90°C
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
81
typ
90
max
108
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
mm
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Symbol Conditions
m
H
D
S
F
M
= 90 kN, T
a
= 25 °C
min
35.3
56
typ
max
2.9
36
Air strike distance
D
a
22
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
