V
DSM
I
TAVM
I
TRMS
I
TSM
V
T0
r
T
•
•
•
•
=
=
=
=
=
=
1800 V
1660 A
2610 A
21000 A
0.83 V
0.230 mΩ
Ω
Phase Control Thyristor
5STP 18F1800
Doc. No. 5SYA1028-04 Sep. 01
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Blocking
Part Number
V
DRM
V
RSM1
I
DRM
I
RRM
dV/dt
crit
V
RRM
5STP 18F1800 5STP 18F1600 5STP 18F1200
Conditions
1800 V
2000 V
1600 V
1800 V
≤
200 mA
≤
200 mA
1000 V/µs
1200 V
1400 V
f = 50 Hz, t
p
= 10ms
t
p
= 5ms, single pulse
V
DRM
V
RRM
T
j
= 125°C
Exp. to 0.67 x V
DRM
, T
j
= 125°C
Mechanical data
F
M
Mounting force
nom.
min.
max.
a
Acceleration
Device unclamped
Device clamped
m
D
S
D
a
Weight
Surface creepage distance
Air strike distance
50 m/s
2
100 m/s
2
0.6 kg
25 mm
14 mm
22 kN
14 kN
24 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
