V
DSM
I
TAVM
I
TRMS
I
TSM
V
T0
r
T
•
•
•
•
•
=
=
=
=
=
=
2800 V
2625 A
4120 A
43000 A
0.85 V
0.160 mΩ
Ω
Phase Control Thyristor
5STP 24H2800
Doc. No. 5SYA1047-02 Sep. 01
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Part Number
V
DRM
V
RSM1
I
DRM
I
RRM
dV/dt
crit
V
RRM
5STP 24H2800 5STP 24H2600 5STP 24H2200
Conditions
2800 V
3000 V
2600 V
2800 V
≤
300 mA
≤
300 mA
1000 V/µs
2200 V
2400 V
f = 50 Hz, t
p
= 10ms
t
p
= 5ms, single pulse
V
DRM
V
RRM
T
j
= 125°C
Exp. to 0.67 x V
DRM
, T
j
= 125°C
Mechanical data
F
M
Mounting force
nom.
min.
max.
a
Acceleration
Device unclamped
Device clamped
m
D
S
D
a
Weight
Surface creepage distance
Air strike distance
50 m/s
2
100 m/s
2
0.9 kg
36 mm
15 mm
50 kN
45 kN
60 kN
ABB Semiconductors AG reserves the right to change specifications without notice.