V
DSM
I
TAVM
I
TRMS
I
TSM
V
T0
r
T
=
=
=
=
=
=
6500 V
2810 A
4410 A
45000 A
1.12 V
0.29 mΩ
Ω
Phase Control Thyristor
5STP 26N6500
Doc. No. 5SYA1001-03 Jan. 02
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Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol
V
DSM,
V
RSM
V
DRM,
V
RRM
V
RSM1
dV/dt
crit
Parameter
Conditions
f = 5 Hz, t
p
= 10ms
f = 50 Hz, t
p
= 10ms
t
p
= 5ms, single pulse
Exp. to 0.67 x V
DRM
, T
j
= 125°C
5STP 26N6500 5STP 26N6200 5STP 26N5800
6500 V
5600 V
7000 V
6200 V
5300 V
6700 V
2000 V/µs
min
typ
max
600
600
Unit
mA
mA
5800 V
4900 V
6300 V
Characteristic values
Symbol Conditions
I
DSM
I
RSM
V
DSM
, T
j
= 125°C
V
RSM
, T
j
= 125°C
Forwarde leakage current
Reverse leakage current
V
DRM
/ V
RRM
are equal to V
DSM
/ V
RSM
values up to T
j
= 110°C
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
81
typ
90
max
108
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
2
2
Parameter
Weight
Surface creepage distance
Air strike distance
Symbol Conditions
m
D
S
D
a
min
56
22
typ
2.9
max
1)
Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
