V
DRM
I
T(AV)M
I
T(RMS)
I
TSM
V
(T0)
r
T
=
=
=
=
=
=
1800
3108
4882
47×10
3
0.984
0.081
V
A
A
A
V
mΩ
Phase Control Thyristor
5STP 30H1801
Doc. No. 5SYA1066-01 March 05
•
•
•
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Blocking
Maximum rated values
1)
Symbol
V
DRM,
V
RRM
dV/dt
crit
Parameter
Conditions
f = 50 Hz, t
p
= 10 ms
Exp. to 1210 V, T
vj
= 125°C
Symbol Conditions
I
DRM
I
RRM
5STP 30H1801 5STP 30H1601
1800 V
1600 V
1000 V/µs
min
typ
5STP 30H1401
1400 V
Characteristic values
max
200
200
Unit
mA
mA
Forward leakage current
Reverse leakage current
V
DRM
, T
vj
= 125°C
V
RRM
, T
vj
= 125°C
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
45
typ
50
max
55
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
2
2
Parameter
Weight
Surface creepage distance
Symbol Conditions
m
D
S
min
36
typ
max
0.93
Air strike distance
D
a
15
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
