V
DSM
I
TAVM
I
TRMS
I
TSM
V
T0
r
T
=
=
=
=
=
=
2800 V
3740 A
5880 A
60000 A
0.95 V
0.1 mΩ
Ω
Phase Control Thyristor
5STP 33L2800
Doc. No. 5SYA1011-03 Jan. 02
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Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol
V
DRM,
V
RRM
V
RSM1
dV/dt
crit
Parameter
Conditions
f = 50 Hz, t
p
= 10ms
t
p
= 5ms, single pulse
Exp. to 0.67 x V
DRM
, T
j
= 125°C
5STP 33L2800
2800 V
3000 V
5STP 33L2600
2600 V
2800 V
1000 V/µs
min
typ
5STP 33L2200
2200 V
2400 V
Characteristic values
Symbol Conditions
I
DRM
I
RRM
V
DRM
, Tj = 125°C
V
RRM
, Tj = 125°C
max
400
400
Unit
mA
mA
Forwarde leakage current
Reverse leakage current
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
63
typ
70
max
84
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
2
2
Parameter
Weight
Surface creepage distance
Air strike distance
Symbol Conditions
m
D
S
D
a
min
36
15
typ
1.45
max
1)
Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
