V
DSM
I
TAVM
I
TRMS
I
TSM
V
T0
r
T
•
•
•
•
•
=
=
=
=
=
=
5200 V
3875 A
6090 A
55000 A
1.03 V
0.160 mΩ
Ω
Phase Control Thyristor
5STP 34Q5200
Doc. No. 5SYA1052-01 Sep. 01
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Part Number
V
DSM
V
DRM
V
RSM1
I
DSM
I
RSM
dV/dt
crit
V
RSM
V
RRM
5STP
5200 V
4400 V
5700 V
5STP 34Q5000 5STP 34Q4600
Conditions
5000 V
4200 V
5500 V
≤
500 mA
≤
500 mA
2000 V/µs
4600 V
4000 V
5100 V
f = 5 Hz, t
p
= 10ms
f = 50 Hz, t
p
= 10ms
t
p
= 5ms, single pulse
V
DSM
V
RSM
T
j
= 125°C
Exp. to 0.67 x V
DRM
, T
j
= 125°C
V
DRM
/ V
RRM
are equal to V
DSM
/ V
RSM
values up to T
j
= 110°C
Mechanical data
F
M
Mounting force
nom.
min.
max.
a
Acceleration
Device unclamped
Device clamped
m
D
S
D
a
Weight
Surface creepage distance
Air strike distance
50 m/s
2
100 m/s
2
2.1 kg
36 mm
15 mm
90 kN
81 kN
108 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
