V
DSM
I
TAVM
I
TRMS
I
TSM
V
T0
r
T
=
=
=
=
=
=
4200 V
4275 A
6715 A
60000 A
0.95 V
0.130 mΩ
Doc. No. 5SYA1051-01 Sep.00
Phase Control Thyristor
5STP 38Q4200
•
Patented free-floating silicon technology
•
Low on-state and switching losses
•
Designed for traction, energy and industrial applications
•
Optimum power handling capability
•
Interdigitated amplifying gate.
Blocking
Part Number
V
DRM
V
RSM1
I
DRM
I
RRM
dV/dt
crit
V
RRM
5STP 38Q4200
4200 V
4600 V
5STP 38Q4000
4000 V
4400 V
≤
400 mA
≤
400 mA
2000 V/µs
5STP 38Q3600
3600 V
4000 V
Conditions
f = 50 Hz, t
p
= 10ms
t
p
= 5 ms, single pulse
V
DRM
V
RRM
@ Exp. to 0.67xV
DRM
T
j
= 125°C
Mechanical data
F
M
Mounting force
nom.
min.
max.
a
Acceleration
Device unclamped
Device clamped
m
D
S
D
a
Weight
Surface creepage distance
Air strike distance
50 m/s
100 m/s
2.1 kg
36 mm
15 mm
2
2
90 kN
81 kN
108 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
