V
DSM
I
TAVM
I
TRMS
I
TSM
V
T0
r
T
=
=
=
=
=
=
2800 V
5490 A
8625 A
75000 A
0.86 V
0.070 mΩ
Doc. No. 5SYA1050-01 Sep.00
Phase Control Thyristor
5STP 45Q2800
•
Patented free-floating silicon technology
•
Low on-state and switching losses
•
Designed for traction, energy and industrial applications
•
Optimum power handling capability
•
Interdigitated amplifying gate.
Blocking
Part Number
V
DRM
V
RSM1
I
DRM
I
RRM
dV/dt
crit
V
RRM
5STP 45Q2800
2800 V
3000 V
5STP 45Q2600
2600 V
2800 V
≤
400 mA
≤
400 mA
1000 V/µs
5STP 45Q2200
2200 V
2400 V
Conditions
f = 50 Hz, t
p
= 10ms
t
p
= 5 ms, single pulse
V
DRM
V
RRM
@ Exp. to 0.67xV
DRM
T
j
= 125°C
Mechanical data
F
M
Mounting force
nom.
min.
max.
a
Acceleration
Device unclamped
Device clamped
m
D
S
D
a
Weight
Surface creepage distance
Air strike distance
50 m/s
100 m/s
2.1 kg
36 mm
15 mm
2
2
90 kN
81 kN
108 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
