5STP 45Q2800
On-state
I
TAVM
I
TRMS
I
TSM
I
2
t
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
5490 A
8625 A
75000 A
79000 A
28125 kA
2
s
25900 kA
2
s
V
T
V
T0
r
T
I
H
On-state voltage
Threshold voltage
Slope resistance
Holding current
1.29 V
0.86 V
0.070 mΩ
40-100 mA
20-75 mA
I
L
Latching current
100-500 mA
150-350 mA
tp
tp
tp
tp
I
T
I
T
T
j
T
j
T
j
T
j
=
=
=
=
=
=
10 ms
8.3 ms
10 ms
8.3 ms
6000 A
3000 - 9000 A
T
j
=
125°C
T
j
=
125°C
Half sine wave, T
C
= 70°C
After surge:
V
D
= V
R
= 0V
= 25°C
= 125°C
= 25°C
= 125°C
Switching
di/dt
crit
Critical rate of rise of on-state
current
≤
≤
250 A/µs
500 A/µs
Cont.
60 sec.
V
D
≤
0.67⋅V
DRM
I
TRM
=
I
FG
t
d
t
q
Delay time
Turn-off time
3.0 µs
400 µs
V
D
= 0.4⋅V
DRM
I
FG
=
=
T
j
= 125°C
3000 A f = 50 Hz
2.0 A t
r
= 0.5 µs
2.0 A t
r
= 0.5 µs
3000 A T
j
= 125°C
200 V
-5 A/µs
V
D
≤
0.67⋅V
DRM
I
TRM
=
dv
D
/dt = 20V/µs V
R
>
Q
rr
Recovery charge
min
max
4200 µAs
6500 µAs
di
T
/dt =
Triggering
V
GT
I
GT
V
GD
I
GD
V
FGM
I
FGM
V
RGM
P
G
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Maximum gate power loss
2.6 V
T
j
= 25°C
400 mA T
j
= 25°C
0.3 V
10 mA
12 V
10 A
10 V
3W
V
D
V
D
= 0.4⋅V
DRM
= 0.4⋅V
DRM
ABB Semiconductors AG reserves the right to change specifications without notice.
2 of 6
Doc. No. 5SYA1050-01 Sep.00
ABB [ THE ABB GROUP ]
