V
DRM
I
T(AV)M
I
T(RMS)
I
TSM
V
(T0)
r
T
=
=
=
=
=
=
1800
6100
9600
94×10
3
0.9
0.05
V
A
A
A
V
mΩ
Ω
Phase Control Thyristor
5STP 50Q1800
Doc. No. 5SYA1070-01 Okt. 03
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Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol
V
DRM,
V
RRM
V
RSM
dV/dt
crit
Parameter
Conditions
f = 50 Hz, t
p
= 10 ms
t
p
= 5 ms, single pulse
Exp. to 0.67 x V
DRM
, T
vj
= 125°C
Symbol Conditions
I
DRM
I
RRM
5STP 50Q1800
1800 V
2000 V
--
--
--
1000 V/µs
min
typ
max
300
300
--
--
--
Characteristic values
Unit
mA
mA
Forward leakage current
Reverse leakage current
V
DRM
, T
vj
= 125°C
V
RRM
, T
vj
= 125°C
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
81
typ
90
max
108
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
mm
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Symbol Conditions
m
H
D
S
F
M
= 90 kN, T
a
= 25 °C
min
25.5
36
typ
max
2.1
26.5
Air strike distance
D
a
15
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
