ACE1550B
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE1550B combines advanced trench MOSFET technology with a low resistance package to
provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones,
Pagers.
Features
V
DS
(V) =-20V
I
D
=-0.7A
R
DS(ON)
<620mΩ (V
GS
=-4.5V)
R
DS(ON)
<860mΩ (V
GS
=-2.5V)
R
DS(ON)
<1450mΩ (V
GS
=-1.8V)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current * AC
Pulsed Drain Current * B
Power Dissipation
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol Max Unit
V
DSS
V
GSS
I
D
I
DM
P
D
-20
±12
-0.7
-0.56
-1
0.27
0.16
V
V
A
A
W
O
Operating Junction Temperature / Storage Temperature Range T
J
/T
STG
-55/150
C
Packaging Type
SOT-523
VER 1.2
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
