ACE1632B 参数 Datasheet PDF下载

ACE1632B

N-Channel Enhancement Mode Field Effect Transistor

Description

ACE1613B uses advanced trench technology to provide excellent R

DS(ON)

. This device particularly suits

for low voltage application such as power management of desktop computer or notebook computer power

management, DC/DC converter.

This device has specifically been designed to minimize input capacitance and gate charge. It is therefore

suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and

Computer application. It is also intended for any application with low gate charge drive requirements.

Features





V

DS

=60V, I

D

=18A, V

GS

20V

R

DS(ON)

<40mΩ @V

GS

=10V

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Maximum Drain Current

Continuous

Pulsed

Symbol Max Unit

V

DSS

V

GSS

I

D

P

D

60

±20

18

45

110

V

V

A

W

O

Continuous Power Dissipation (large heatsick)

Operating Temperature / Storage Temperature T

J

/T

STG

-55/150

C

Packaging Type

TO-252

D

G

S

VER 1.2

1