ACE2301B
P-Channel Enhancement Mode MOSFET
Description
ACE2301B is produced with high cell density DMOS trench technology, which is especially used to
minimize on-state resistance. This device particularly suits low voltage applications such as portable
equipment, power management and other battery powered circuits, and low in-line power dissipation are
needed in a very small outline surface mount package with excellent thermal and electrical capabilities.
Features
V
DS
=-20V, V
GS
8V, I
D
=-2.3A
R
DS(ON)
@V
GS
=-4.5V/I
D
-2.8A, 100mR(Typ.)
R
DS(ON)
@V
GS
=-2.5V/I
D
-2A, 120mR(Typ.)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Continuous
Pulsed
(1)
25
O
C
70
O
C
Symbol
V
DSS
V
GSS
I
D
P
D
Max
-20
±8
-2.3
-10
750
480
Unit
V
V
A
mW
O
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150
C
Packaging Type
SOT-23-3
3
SOT-23-3 Description
1
2
3
1
2
Gate
Source
Drain
VER 1.3
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
