ACE2302
N-Channel Enhancement Mode MOSFET
Description
The ACE2302 is the N-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
20V/3.6A, R
DS(ON)
=80mΩ@V
GS
=4.5V
20V/3.1A, R
DS(ON)
=95mΩ@V
GS
=2.5V
Super high density cell design for extremely low R
DS(ON)
Exceptional on-resistance and maximum DC current capability
Application
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
=150℃)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol Max
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
20
±12
3.2
2.6
10
1.6
1.25
0.8
150
-55/150
100
O
Unit
V
V
A
A
A
W
O
O
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
C
C
C/W
VER 1.3
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
