ACE2303B
P-Channel Enhancement Mode Field Effect Transistor
Description
This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench
technology, which is especially used to minimize on-state resistance. This device is particularly suited for
low voltage application such as portable equipment, power management and other battery powered
circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
V
DS
=-30V
I
D
=-3.6A
R
DS(ON)
58mΩ @ V
GS
=-10V
R
DS(ON)
87mΩ @ V
GS
=-4.5V
High density cell design for low R
DS(ON)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Continuous
Pulsed
(1)
25
O
C
Symbol
V
DSS
V
GSS
I
D
P
D
Max
-30
±20
-3.6
-10
1.4
Unit
V
V
A
W
O
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150
C
Packaging Type
SOT-23-3L
3
SOT-23-3L Description
1
2
3
1
2
Gate
Source
Drain
Ordering information
ACE2303B XX + H
Halogen - free
Pb - free
BM : SOT-23-3L
VER 1.2
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
