ACE2342
N-Channel Enhancement Mode MOSFET
Description
The ACE2342 is the N-Channel logic enhancement mode power field effect transistors are produced
using high cell density , DMOS trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited for low voltage application such as
cellular phone and notebook computer power management and other battery powered circuits, and low
in-line power loss are needed in a very small outline surface mount package.
Features
20V/5.0A,R
DS(ON)
= 35mΩ@V
GS
=4.5V
20V/4.5A,R
DS(ON)
= 40mΩ@V
GS
=2.5V
20V/4.0A,R
DS(ON)
= 48mΩ@V
GS
=1.8V
Super high density cell design for extremely low R
DS(ON)
Exceptional on-resistance and maximum DC current capability
Application
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
(T
A
=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
=150℃)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol Typical Unit
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
20
±12
4.0
3.0
13
1.0
1.25
0.8
V
V
A
A
A
W
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
-55/150
℃
-55/150
℃
140
℃/W
VER 1.3
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
