ACE2301
Technology
Electrical Characteristics
Parameter
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Trans conductance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Max. Diode Forward Current
Diode Forward Voltage
Symbol
Static
BV
DSS
R
DS(ON)
R
DS(ON
)
V
GS(th)
I
DSS
I
GSS
G
fs
Q
g
Q
gs
Q
gd
T
d(on)
T
f
t
d(off)
t
f
C
iss
C
oss
C
rss
I
S
V
SD
I
S
=-1.6A,V
GS
=0V
V
GS
=0V, I
D
=250uA
V
GS
=-4.5V, I
D
=-2.8A
V
GS
=-2.5V, I
D
=-2.0A
V
DS
=VGS, I
D
=250uA
V
DS
=-9.6V, V
GS
=0V
V
GS
=±8V, V
DS
=0V
V
DS
=-5V, I
D
=-2.8A
Dynamic
3)
P-Channel Enhancement Mode MOSFET
Conditions
Min.
-20
Typ.
Max.
Unit
V
70.0
85.0
-0.4
100.0
150.0
-0.9
-1
±100
mΩ
V
uA
nA
S
6.5
5.8
0.85
1.7
13
36
42
34
415
223
87
-1.6
-1.2
25
60
70
60
10
V
DS
=-6V, I
D
=-2.8A
V
GS
=-4.5V
V
DD
=-6V,RL=6Ω
I
D
=-1A, V
GEN
=-4.5V
R
G
=6Ω
VDS=-6V, VGS=0V
F=1.0MHz
nC
ns
pF
Source-Drain Diode
A
V
Note: Pulse test pulse width<=300us, duty cycle<=2%.
VER 1.2
3
ACE [ ACE TECHNOLOGY CO., LTD. ]
