ACE2303
Technology
Description
The ACE2303 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
P-Channel Enhancement Mode MOSFET
Features
•
•
•
•
•
•
•
•
•
•
•
•
-30V/-2.6A, R
DS(ON)
=130mΩ@V
GS
=-10V
-30V/-2.0A, R
DS(ON)
=180mΩ@V
GS
=-4.5V
Super high density cell design for extremely low R
DS(ON)
Exceptional on-resistance and maximum DC current capability
SOT-23-3L package design
Application
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
(T
A
=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
=150℃)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol Typical Unit
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θ
JA
-30
±20
-3.0
-2.0
-10
-1.25
1.25
0.8
150
100
V
V
A
A
A
W
℃
℃/W
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
-55/150
℃
VER 1.2
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
