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ACE24LC08DM+TH 参数 Datasheet PDF下载

ACE24LC08DM+TH图片预览
型号: ACE24LC08DM+TH
PDF下载: 下载PDF文件 查看货源
内容描述: 两线串行EEPROM [Two-wire Serial EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 18 页 / 717 K
品牌: ACE [ ACE TECHNOLOGY CO., LTD. ]
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ACE24LC02/04/08/16
Two-wire Serial EEPROM
Page Write:
The 2K EEPROM is capable of an 8-byte page write, and the 4K, 8K and 16K devices are capable of
16-byte page writes.
A page write is initiated the same as a byte write, but the microcontroller does not send a stop
condition after the first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the
first data word, the microcontroller can transmit up to seven (2K) or fifteen (4K, 8K, 16K) more data
words. The EEPROM will respond with a zero after each data word received. The microcontroller must
terminate the page write sequence with a stop condition (refer to Figure 9).
The data word address lower three (2K) or four (4K, 8K, 16K) bits are internally incremented following
the receipt of each data word. The higher data word address bits are not incremented, retaining the
memory page row location. When the word address, internally generated, reaches the page boundary,
the following byte is placed at the beginning of the same page. If more than eight (2K) or sixteen (4K,
8K, 16K) data words are transmitted to the EEPROM, the data word address will “roll over” and previous
data will be overwritten.
Acknowledge Polling:
Once the internally timed write cycle has started and the EEPROM inputs are disabled, acknowledge
polling can be initiated. This involves sending a start condition followed by the device address word.
The read/write bit is representative of the operation desired. Only if the internal write cycle has
completed will the EEPROM respond with a zero allowing the read or write sequence to continue.
Read operations
Read operations are initiated the same way as write operations with the exception that the read/write
select bit in the device address word is set to one. There are three read operations: current address
read, random address read and sequential read.
Current Address Read:
The internal data word address counter maintains the last address accessed during the last read or
write operation, incremented by one. This address stays valid between operations as long as the chip
power is maintained. The address “roll over” during read is from the last byte of the last memory page
to the first byte of the first page. The address “roll over” during write is from the last byte of the current
page to the first byte of the same page.
Once the device address with the read/write select bit set to one is clocked in and acknowledged by
the EEPROM, the current address data word is serially clocked out. The microcontroller does not
respond with an input zero but does generate a following stop condition (refer to Figure 10).
Random Read:
A random read requires a “dummy” byte write sequence to load in the data word address. Once the
device address word and data word address are clocked in and acknowledged by the EEPROM, the
microcontroller must generate another start condition. The microcontroller now initiates a current
address read by sending a device address with the read/write select bit high. The EEPROM
acknowledges the device address and serially clocks out the data word. The microcontroller does not
respond with a zero but does generate a following stop condition (refer to Figure 11).
VER 1.6
10