ACE3400B
N-Channel Enhancement Mode MOSFET
Description
The ACE3400BBM+ uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge
low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load
switch or in PWM applications.
Features
V
DS
30V
R
DS(ON)
@V
GS
=10V, I
DS
=5.2A, Typ 24mΩ
R
DS(ON)
@V
GS
=4.5V, I
DS
=5A, Typ 27mΩ
Fast switching speed
Low threshold voltage (0.8V) makes this device ideal for portable equipment
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous (Note 1)
Pulsed (Note 2)
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
Max
30
±12
5.2
30
1
Unit
V
V
A
W
Power Dissipation (Note 1)
Operating and storage junction temperature range T
J
,T
STG
-55~+150
℃
Packaging Type
SOT-23-3L
3
SOT-23-3L Description Function
1
2
3
G
S
D
Gate
Source
Drain
1
2
VER 1.2
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
