ACE3401B
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE3401B uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and
operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general
applications.
Features
V
DS
(V)=-30V, I
D
=-4A
R
DS(ON)
<43mΩ @ V
GS
=-10V
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
T
A
=25
O
C
T
A
=70
O
C
T
A
=25
O
C
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
Max
-30
±12
-4
-3.5
-30
1.4
Unit
V
V
A
A
W
O
Drain Current (Pulse)
Power Dissipation
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150
C
Packaging Type
SOT-23-3L
3
D
SOT-23-3L Description
1
2
3
1
2
Gate
Source
Drain
G
S
Ordering information
ACE3401B XX + H
Halogen - free
Pb - free
BM : SOT-23-3L
VER 1.2
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
