ACE3400
Technology
Description
The ACE3400 is the N-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits, and low in-line power loss are needed
in a very small outline surface mount package.
N-Channel Enhancement Mode MOSFET
Features
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30V/5.4A, R
DS(ON)
=38mΩ@V
GS
=10V
30V/4.6A, R
DS(ON)
=42mΩ@V
GS
=4.5V
30V/3.8A, R
DS(ON)
=55mΩ@V
GS
=2.5V
Super high density cell design for extremely low R
DS(ON)
Exceptional on-resistance and maximum DC current capability
SOT-23-3L package design
Application
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
Symbol Max Unit
V
DSS
30
V
V
GSS
±20
V
T
A
=25℃
4.5
Continuous Drain Current (T
J
=150℃)
A
I
D
T
A
=70℃
3.5
Pulsed Drain Current
I
DM
25
A
Continuous Source Current (Diode Conduction)
I
S
1.7
A
T
A
=25℃
2.0
Power Dissipation
W
P
D
T
A
=70℃
1.3
O
Operating Junction Temperature
T
J
150
C
Storage Temperature Range
T
STG
-55/150
O
C
Thermal Resistance-Junction to Ambient
R
θ
JA
90
O
C/W
Parameter
Drain-Source Voltage
Gate-Source Voltage
VER 1.2
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
