ACE4826B
Dual N-Channel Enhancement Mode MOSFET
Description
This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench
technology, which is especially used to minimize on-state resistance. This device is suitable for use as a
load switch, power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter
Systems.
Features
V
DS
60V, V
GS
20V, I
D
5.5A
R
DS(ON)
@10V, 30mΩ (typ.)
R
DS(ON)
@4.5V, 35mΩ (typ.)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Total Power Dissipation (Note1,2)
Note: 1. Surface Mounted on 1in pad area, t ≤10sec.
2. Rating for a single chip.
Symbol Max Unit
V
DSS
V
GSS
I
D
P
D
60
±20
5.5
1
V
V
A
W
O
Operating and Storage Junction Temperature Range T
J
/T
STG
-55/150
C
Packaging Type
SOP-8
VER 1.2
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
