ACE4953B
Dual P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load switch or in PWM applications.
Features
V
DS
(V)=-20V
I
D
=-5.5A (V
GS
=-10V)
R
DS(ON)
<55mΩ (V
GS
=-10V)
R
DS(ON)
<58mΩ (V
GS
=-4.5V)
R
DS(ON)
<80mΩ (V
GS
=-2.5V)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) * AC
T
A
=25
O
C
T
A
=70
O
C
T
A
=25
O
C
T
A
=70
O
C
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
Max
-20
±12
-5.5
-4.4
-25
2
1.5
Unit
V
V
A
A
W
O
Drain Current (Pulse) * B
Power Dissipation
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150
C
Packaging Type
SOP-8
VER 1.2
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
