ACE5801
P-Channel Power MOSFET
Description
The ACE5801 uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and
operation with low gate voltage.
. This device is suitable for use as a load switching application and a wide variety of other applications.
Features
Advanced trench MOSFET process technology
Ultra low on-resistance with low gate charge
Applications
PWM application
Load switch
Battery charge in cellular handset
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (note 1)
Power Dissipation (note 2, T
A
=25℃)
Maximum Power Dissipation (note 3, T
C
=25℃)
Thermal Resistance from Junction to Ambient (note 4)
Thermal Resistance from Junction to case (note 4)
Junction Temperature
Storage Temperature
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
R
θJA
R
θJC
T
J
T
STG
Max
-12
±8
-16
-65
2.5
18
50
6.9
150
-55~150
Unit
V
V
A
W
℃/W
℃
Packaging Type
DFNWB2*2-6L
VER 1.2
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
