ACE632
N&P Pair Enhancement Mode MOSFET
Description
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology. This high density process is especially tailored to
minimize on-state resistance and provide superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer power management and other battery
powered circuits where high-side switching, low in-line power loss, and resistance to transients are
needed.
Features
N-Channel
20V/0.95A,R
DS(ON)
=380mΩ@V
GS
=4.5V
20V/0.75A,R
DS(ON)
=450mΩ@V
GS
=2.5V
20V/0.65A,R
DS(ON)
=800mΩ@V
GS
=1.8V
P-Channel
-20V/1.0A,R
DS(ON)
= 520mΩ@V
GS
=-4.5V
-20V/0.8A,R
DS(ON)
= 700mΩ@V
GS
=-2.5V
-20V/0.7A,R
DS(ON)
= 950mΩ@V
GS
=-1.8V
Super high density cell design for extremely low R
DS(ON)
Exceptional on-resistance and maximum DC current capability
Application
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
(T
A
=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
=150℃)
Pulsed Drain Current
1)
Continuous Source Current (Diode Conduction)
Power Dissipation
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=80℃
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
Typical
N-Channel P-Channel
20
±12
1.2
0.9
4
0.6
0.3
0.19
-20
±12
-1.0
-0.7
-3
-0.6
Unit
V
V
A
A
W
VER 1.3
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
