ACE633
60V Complementary Enhancement Mode Field Effect Transistor
Description
The ACE633 uses advanced trench technology MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Features
N-Channel
V
DS
(V)=60V
I
D
=5A
R
DS(ON)
<35mΩ (V
GS
=10V)
<40mΩ (V
GS
=4.5V)
P-Channel
V
DS
(V)=-60V
I
D
=-3.5A
R
DS(ON)
<75mΩ (V
GS
=-10V)
<90mΩ (V
GS
=-4.5V)
Absolute Maximum Ratings
(T
A
=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
=150℃) T
A
=25℃
*AC
T
A
=70℃
Drain Current (pulse) * B
Power Dissipation
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
J
T
STG
Typical
N-Channel P-Channel
60
±20
5
4
22
2
1.3
-55 to 150
-55 to 150
-60
±20
-3.5
-2.8
-22
2
1.3
Unit
V
V
A
A
W
O
O
Operating Junction Temperature
Storage Temperature Range
C
C
VER 1.2
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
