ACE6428B
N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE6428B uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge. This
device is suitable for use as a high side switch in SMPS and general purpose applications.
Features
V
DS
(V)=30V
I
D
=43A (V
GS
=10V)
R
DS(ON)
＜10mΩ
(V
GS
=10V)
R
DS(ON)
＜14.5mΩ
(V
GS
=4.5V)
100% Delta Vsd Tested
100% Rg Tested
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
T
A
=25
O
C
T
A
=100
O
C
T
A
=25
O
C
T
A
=70
O
C
T
A
=25
O
C
T
A
=100
O
C
A
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DSM
P
D
P
DSM
Max
30
±20
43
27
80
11
8
30
12
2
1.3
Unit
V
V
A
Drain Current (Pulse)
C
Drain Current (Continuous)
Power Dissipation
Power Dissipation
B
A
W
W
O
T
A
=25
O
C
T
A
=70
O
C
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
t≦10s
Steady-State
Maximum Junction-to-Ambient
A D
Steady-State
C
Symbol Typ Max Units
R
θJA
R
θJC
21
50
3.5
25
60
4.2
℃/W
℃/W
℃/W
VER 1.2
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
