ACE7401
0.170
0.240
S
-1.2
V
Technology
P-Channel Enhancement Mode MOSFET
V
GS
=-2.5V, I
D
=-1.5A
V
GS
=-1.8V, I
D
=-1.0A
0.155
0.210
4
-0.8
5.8
V
DS
=-15V, V
GS
=-4.5V, I
D
=-2.0A
0.8
1.5
380
V
DS
=-15V, V
GS
=0V, f=1MHz
55
40
6
pF
nC
Forward Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
Gfs
V
SD
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
V
DS
=-10V,I
D
=-2.8A
I
S
=-1.2A, V
GS
=0V
Dynamic
V
DD
=-15V, R
L
=15Ω, I
D
=-1.0A, V
GEN
=-10V,
R
G
=3Ω
3.9
40
15
nS
Typical Performance Characteristics
Output Characteristics
Transfer Characteristics
V
DS
-Drain-to-Source Voltage (V)
V
GS
-Gate-to-Source Voltage (V)
VER 1.2
3
ACE [ ACE TECHNOLOGY CO., LTD. ]
