ACE8212B
Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD
Description
The ACE8212B uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge.
They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain
configuration.
Features
V
DS
(V)=20V
I
D
=8A (V
GS
=10V)
TSSOP-8
R
DS(ON)
<13 mΩ (V
GS
=10V)
R
DS(ON)
<14 mΩ (V
GS
=4.5V)
R
DS(ON)
<19 mΩ (V
GS
=2.5V)
R
DS(ON)
<27 mΩ (V
GS
=1.8V)
DFN2*5
R
DS(ON)
<13 mΩ (V
GS
=10V)
R
DS(ON)
<16 mΩ (V
GS
=4.5V)
R
DS(ON)
<22 mΩ (V
GS
=2.5V)
R
DS(ON)
<35 mΩ (V
GS
=1.8V)
ESD Protected: 2000V
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current *AC
Pulsed Drain Current
TSSOP-8
Power Dissipation
DFN2*5
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
P
D
T
A
=25℃
T
A
=70℃
Symbol Max Unit
V
DSS
V
GSS
I
D
I
DM
20
±12
8
6.4
30
1.5
1
1.6
1
O
V
V
A
A
W
Operating Junction Temperature / Storage Temperature Range T
J
/T
STG
-55/150
C
VER 1.2
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
