ACE8601B 参数 Datasheet PDF下载

ACE8601B

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

Description

The ACE8601B uses advanced trench technology to provide excellent R

DS(ON)

and low gate charge.

They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. This device is

suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain

configuration.

Features













V

DS

(V)=20V

I

D

=6A (V

GS

=4.5V)

R

DS(ON)

<21 mΩ (V

GS

=4.5V)

R

DS(ON)

<25 mΩ (V

GS

=2.5V)

R

DS(ON)

<35 mΩ (V

GS

=1.8V)

ESD Protected: 2000V

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current *AC

Pulsed Drain Current

Power Dissipation

T

A

=25℃

T

A

=70℃

T

A

=25℃

T

A

=70℃

Symbol Max Unit

V

DSS

V

GSS

I

D

I

DM

P

D

20

±8

6

4.8

24

2.5

1.6

V

V

A

A

W

O

Operating Junction Temperature / Storage Temperature Range T

J

/T

STG

-55/150

C

Packaging Type

DFN3*3-8L

VER 1.2

1