ACE8810B 参数 Datasheet PDF下载

ACE8810B

Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

Description

The ACE8810B uses advanced trench technology to provide excellent R

DS(ON)

and low gate charge.

They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. This device is

suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain

configuration.

Features













V

DS

(V)=20

I

D

=7A (V

GS

=4.5V)

R

DS(ON)

＜21Ω

(V

GS

=4.5V)

R

DS(ON)

＜25Ω

(V

GS

=2.5V)

R

DS(ON)

＜33Ω

(V

GS

=1.8V)

ESD Protected: 2,000V

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Continuous) *AC

T

A

=25

O

C

T

A

=70

O

C

T

A

=25

O

C

T

A

=70

O

C

Symbol

V

DS

V

GS

I

D

I

DM

P

D

Max

20

±8

7

5.6

30

1.5

1

W

O

Unit

V

V

A

Drain Current (Pulse) *B

Power Dissipation

(1)

Operating and Storage Temperature Range

T

J,

T

STG

-55 to 150

C

Packaging Type

TSSOP-8

VER 1.2

1