ACE9926B
Dual N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE9926B uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge.
They offer operation over a wide gate drive range from 2.5V to 12V. The two devices may be used
individually, in parallel or to form a bidirectional blocking switch.
Features
V
DS
(V)=20V
I
D
=6A (V
GS
=4.5V)
R
DS(ON)
<30mΩ (V
GS
=4.5V)
R
DS(ON)
<40mΩ (V
GS
=2.5V)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) * AC
T
A
=25
O
C
T
A
=70
O
C
T
A
=25
O
C
T
A
=70
O
C
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
Max
20
±12
6
5
24
2
1.3
Unit
V
V
A
A
W
O
Drain Current (Pulse) * B
Power Dissipation
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150
C
Packaging Type
SOP-8
VER 1.2
1