欢迎访问ic37.com |
会员登录 免费注册
发布采购

AFS600-2FGG256I 参数 Datasheet PDF下载

AFS600-2FGG256I图片预览
型号: AFS600-2FGG256I
PDF下载: 下载PDF文件 查看货源
内容描述: Actel的Fusion混合信号FPGA [Actel Fusion Mixed-Signal FPGAs]
分类和应用:
文件页数/大小: 318 页 / 10484 K
品牌: ACTEL [ Actel Corporation ]
 浏览型号AFS600-2FGG256I的Datasheet PDF文件第3页浏览型号AFS600-2FGG256I的Datasheet PDF文件第4页浏览型号AFS600-2FGG256I的Datasheet PDF文件第5页浏览型号AFS600-2FGG256I的Datasheet PDF文件第6页浏览型号AFS600-2FGG256I的Datasheet PDF文件第8页浏览型号AFS600-2FGG256I的Datasheet PDF文件第9页浏览型号AFS600-2FGG256I的Datasheet PDF文件第10页浏览型号AFS600-2FGG256I的Datasheet PDF文件第11页  
Actel Fusion Mixed-Signal FPGAs  
making secure remote ISP possible. A Fusion device provides the most impenetrable security for  
programmable logic designs.  
Single Chip  
Flash-based FPGAs store their configuration information in on-chip flash cells. Once programmed,  
the configuration data is an inherent part of the FPGA structure, and no external configuration  
data needs to be loaded at system power-up (unlike SRAM-based FPGAs). Therefore, flash-based  
Fusion FPGAs do not require system configuration components such as EEPROMs or  
microcontrollers to load device configuration data. This reduces bill-of-materials costs and PCB  
area, and increases security and system reliability.  
Live at Power-Up  
Flash-based Fusion devices are Level 0 live at power-up (LAPU). LAPU Fusion devices greatly simplify  
total system design and reduce total system cost by eliminating the need for CPLDs. The Fusion  
LAPU clocking (PLLs) replaces off-chip clocking resources. The Fusion mix of LAPU clocking and  
analog resources makes these devices an excellent choice for both system supervisor and system  
management functions. LAPU from a single 3.3 V source enables Fusion devices to initiate, control,  
and monitor multiple voltage supplies while also providing system clocks. In addition, glitches and  
brownouts in system power will not corrupt the Fusion device flash configuration. Unlike SRAM-  
based FPGAs, the device will not have to be reloaded when system power is restored. This enables  
reduction or complete removal of expensive voltage monitor and brownout detection devices from  
the PCB design. Flash-based Fusion devices simplify total system design and reduce cost and design  
risk, while increasing system reliability.  
Firm Errors  
Firm errors occur most commonly when high-energy neutrons, generated in the upper atmosphere,  
strike a configuration cell of an SRAM FPGA. The energy of the collision can change the state of the  
configuration cell and thus change the logic, routing, or I/O behavior in an unpredictable way.  
Another source of radiation-induced firm errors is alpha particles. For an alpha to cause a soft or  
firm error, its source must be in very close proximity to the affected circuit. The alpha source must  
be in the package molding compound or in the die itself. While low-alpha molding compounds are  
being used increasingly, this helps reduce but does not entirely eliminate alpha-induced firm errors.  
Firm errors are impossible to prevent in SRAM FPGAs. The consequence of this type of error can be  
a complete system failure. Firm errors do not occur in Fusion Flash-based FPGAs. Once it is  
programmed, the flash cell configuration element of Fusion FPGAs cannot be altered by high-  
energy neutrons and is therefore immune to errors from them.  
Recoverable (or soft) errors occur in the user data SRAMs of all FPGA devices. These can easily be  
mitigated by using error detection and correction (EDAC) circuitry built into the FPGA fabric.  
Low Power  
Flash-based Fusion devices exhibit power characteristics similar to those of an ASIC, making them  
an ideal choice for power-sensitive applications. With Fusion devices, there is no power-on current  
surge and no high current transition, both of which occur on many FPGAs.  
Fusion devices also have low dynamic power consumption and support both low power standby  
mode and very low power sleep mode, offering further power savings.  
Advanced Flash Technology  
The Fusion family offers many benefits, including nonvolatility and reprogrammability through an  
advanced flash-based, 130-nm LVCMOS process with seven layers of metal. Standard CMOS design  
techniques are used to implement logic and control functions. The combination of fine granularity,  
enhanced flexible routing resources, and abundant flash switches allows very high logic utilization  
(much higher than competing SRAM technologies) without compromising device routability or  
performance. Logic functions within the device are interconnected through a four-level routing  
hierarchy.  
Preliminary v1.7  
1-3