FMI16N60E
Features
FUJI POWER MOSFET
Super FAP-E
3
series
Maintains both low power loss and low noise
Lower R
DS
(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller V
GS
ringing waveform during switching
Narrow band of the gate threshold voltage (3.0±0.5V)
High avalanche durability
T-Pack(L)
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Equivalent circuit schematic
Drain(D)
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Gate(G)
Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Maximum Power Dissipation
Operating and Storage Temperature range
Symbol
V
DS
V
DSX
I
D
I
DP
V
GS
I
AR
E
AS
E
AR
dV/dt
-di/dt
P
D
T
ch
T
stg
Characteristics
600
600
±16
±64
±30
16
554.8
27
5.2
100
2.16
270
150
-55 to + 150
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
W
°C
°C
Remarks
V
GS
= -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BV
DSS
V
GS
(th)
I
DSS
I
GSS
R
DS
(on)
g
fs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Q
G
Q
GS
Q
GD
I
AV
V
SD
trr
Qrr
Conditions
I
D
=250µA, V
GS
=0V
I
D
=250µA, V
DS
=V
GS
V
DS
=600V, V
GS
=0V
V
DS
=480V, V
GS
=0V
V
GS
=±30V, V
DS
=0V
I
D
=8A, V
GS
=10V
I
D
=8A, V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
cc
=300V
V
GS
=10V
I
D
=8A
R
GS
=10Ω
V
cc
=300V
I
D
=16A
V
GS
=10V
L=1.74mH, T
ch
=25°C
I
F
=16A, V
GS
=0V, T
ch
=25°C
I
F
=16A, V
GS
=0V
-di/dt=100A/µs, Tch=25°C
min.
600
2.5
-
-
-
-
10
-
-
-
-
-
-
-
-
-
-
16
-
-
-
typ.
-
3.0
-
-
10
0.40
20
2650
230
17
22
10
120
20
76
17
22
-
0.90
0.7
9
max.
-
3.5
25
250
100
0.47
-
3980
345
25.5
33
15
180
30
114
25.5
33
-
1.35
-
-
Unit
V
V
µA
nA
Ω
S
pF
T
ch
=25°C
T
ch
=125°C
ns
nC
A
V
µs
µC
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Test Conditions
Channel to case
Channel to ambient
min.
typ.
max.
0.460
62.0
Unit
°C/W
°C/W
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, I
AS
=7A, L=20.8mH, Vcc=60V, R
G
=50Ω
E
AS
limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : I
F
≤-I
D
, -di/dt=100A/µs, Vcc≤BV
DSS
, Tch≤150°C.
Note *5 : I
F
≤-I
D
, dv/dt=5.2kV/µs, Vcc≤BV
DSS
, Tch≤150°C.
1
ACTEL [ Actel Corporation ]
