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AD660AR 参数 Datasheet PDF下载

AD660AR图片预览
型号: AD660AR
PDF下载: 下载PDF文件 查看货源
内容描述: 单片16位串行/字节DACPORT [Monolithic 16-Bit Serial/Byte DACPORT]
分类和应用: 转换器数模转换器光电二极管信息通信管理
文件页数/大小: 12 页 / 428 K
品牌: AD [ ANALOG DEVICES ]
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AD660
AC PERFORMANCE CHARACTERISTICS
Parameter
Output Settling Time
(Time to
±
0.0008% FS
with 2 kΩ, 1000 pF Load)
Limit
13
8
10
6
8
2.5
0.009
0.056
5.6
83
15
2
120
125
(With the exception of Total Harmonic Distortion + Noise and Signal-to-Noise
Ratio, these characteristics are included for design guidance only and are not subject to test. THD+N and SNR are 100% tested.
T
MIN
T
A
T
MAX
, V
CC
= +15 V, V
EE
= –15 V, V
LL
= +5 V except where noted.)
Units
µs
max
µs
typ
µs
typ
µs
typ
µs
typ
µs
typ
% max
% max
% max
dB min
nV-s typ
nV-s typ
nV/√Hz typ
nV/√Hz typ
Test Conditions/Comments
20 V Step, T
A
= +25°C
20 V Step, T
A
= +25°C
20 V Step, T
MIN
T
A
T
MAX
10 V Step, T
A
= +25°C
10 V Step, T
MIN
T
A
T
MAX
1 LSB Step, T
MIN
T
A
T
MAX
0 dB, 990.5 Hz; Sample Rate = 96 kHz; T
A
= +25°C
–20 dB, 990.5 Hz; Sample Rate = 96 kHz; T
A
= +25°C
–60 dB, 990.5 Hz; Sample Rate = 96 kHz; T
A
= +25°C
T
A
= +25°C
DAC Alternately Loaded with 8000
H
and 7FFF
H
DAC Alternately Loaded with 0000
H
and FFFF
H
;
CS
High
Measured at V
OUT
; 20 V Span; Excludes Reference
Measured at REF OUT
Total Harmonic Distortion + Noise
A, B, S Grade
A, B, S Grade
A, B, S Grade
Signal-to-Noise Ratio
Digital-to-Analog Glitch Impulse
Digital Feedthrough
Output Noise Voltage
Density (1 kHz – 1 MHz)
Reference Noise
Specifications subject to change without notice.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD660 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS*
WARNING!
ESD SENSITIVE DEVICE
PIN CONFIGURATION
–V
+V
EE
V
CC
to AGND . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +17.0 V
V
EE
to AGND . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –17.0 V
V
LL
to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
AGND to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
1 V
Digital Inputs (Pins 5 through 23) to DGND . . . . . . –1.0 V to
+7.0 V
REF IN to AGND . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
10.5 V
Span/Bipolar Offset to AGND . . . . . . . . . . . . . . . . . . .
±
10.5 V
Ref Out, V
OUT
. . . . . . . Indefinite Short to AGND, DGND,
V
CC
, V
EE
, and V
LL
Power Dissipation (Any Package)
To +60°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000 mW
Derates above +60°C . . . . . . . . . . . . . . . . . . . . 8.7 mW/°C
Storage Temperature . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range
(Soldering 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
*Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
1
2
3
4
5
6
7
8
24 REF OUT
23 REF IN
22 SPAN,
BIPOLAR OFFSET
21 V
OUT
20 AGND
CC
LL
+V
DGND
DB7, 15
DB6, 14
DB5, 13
DB4, 12
AD660
TOP VIEW
(Not to Scale)
19
18
LDAC
CLR
17 SER
16
15
14
13
HBE
LBE, UNI/BIP CLEAR
CS
S
OUT
DB3, 11 9
DB2, 10
10
DB1, 9, MSB/LSB 11
DB0, 8, SIN
12
REV. A
–3–