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2N3866 参数 Datasheet PDF下载

2N3866图片预览
型号: 2N3866
PDF下载: 下载PDF文件 查看货源
内容描述: 射频与微波离散小功率三极管 [RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS]
分类和应用: 射频微波
文件页数/大小: 5 页 / 368 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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2N3866 / 2N3866A
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
C)
STATIC
(off)
Symbol
BVCER
BVCEO
BVCBO
BVEBO
ICEO
ICEX
Test Conditions
Min.
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0)
Collector-Base Breakdown Voltage
(IE = 0, IC = 0.1 mAdc)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 28 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 55 Vdc, VBE = 1.5 Vdc)
55
30
55
3.5
-
-
Value
Typ.
-
-
-
-
-
-
Max.
-
-
-
-
20
100
Unit
Vdc
Vdc
Vdc
Vdc
µA
µA
(on)
HFE
DC Current Gain
(IC = 360 mAdc, VCE = 5.0 Vdc) Both
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc)
5.0
10
25
-
-
-
-
200
200
-
-
-
VCE(sat)
-
-
1.0
Vdc
DYNAMIC
Symbol
f
T
Test Conditions
Min.
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)
Output Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
2N3866
2N3866A
500
800
-
Value
Typ.
800
-
2.8
Max.
-
-
3.5
Unit
MHz
COB
pF
2N3866.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.