2N5031 参数 Datasheet PDF下载

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

2N5031

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

Features

•

•

•

Silicon NPN, To-72 packaged VHF/UHF Transistor

1.2 GHz Current-Gain Bandwidth Product @ 5mA IC

Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz

1

4

2

3

1. Emitter

2. Base

3. Collector

4. Case

TO-72

DESCRIPTION:

The 2N5031 is a silicon NPN transistor, designed for general purpose small-signal, pre-driver, and driver,

applications targeted for military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25

°

C)

Symbol

V

CEO

V

CBO

V

EBO

I

C

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Value

10

15

3.0

20

Unit

Vdc

Vdc

Vdc

mA

Thermal Data

P

D

Total Device Dissipation @ T

A

= 25º C

Derate above 25º C

200

1.14

mWatts

mW/ ºC

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at

WWW.ADVANCEDPOWER.COM

or contact our factory direct.