140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
2N6255
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
•
•
•
Silicon NPN, To-39 packaged VHF Transistor
3.0 Watt Power Output @ 175 MHz
Power Gain, G
PE
= 7.8 dB
Efficiency = 50%
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
The 2N6255 is a silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications include amplifier, pre-driver,
driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
18
36
4.0
1
Unit
Vdc
Vdc
Vdc
A
Thermal Data
P
D
Total Device Dissipation @ T
A
= 25ºC
Derate above 25ºC
5.0
28.5
Watts
mW/ º
C
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
ADPOW [ ADVANCED POWER TECHNOLOGY ]
