D
TO-254
G
S
POWER MOS IV
MAXIMUM RATINGS
Symbol
V
DSS
V
GS
I
D
I
DM
I
AR
Parameter
Drain-Source Voltage
Gate-Source Voltage
TM
2N7228
500 Volt
JX2N7228*
JV2N7228*
0.415
Ω
*QUALIFIED TO MIL-S-19500/592 31/7/92
JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS
All Ratings: T
C
= 25°C unless otherwise specified.
2N7228
UNIT
Volts
500
±20
12
R
at
ed
he
MIN
Continuous Drain Current @ T
C
= 25°C
Continuous Drain Current @ T
C
= 100°C
Pulsed Drain Current
Avalanche Current
1
1
8
Amps
48
12
150
Watts
Total Power Dissipation @ T
C
= 25°C
P
D
Total Power Dissipation @ T
C
= 100°C
Linear Derating Factor
E
AS
E
AR
T
J
,T
STG
T
L
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
60
1.2
750
15
W/K
mJ
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.
nc
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
GS
(TH)
I
DSS
I
GSS
I
D
(ON)
Characteristic / Test Conditions
va
la
TYP
MAX
UNIT
Volts
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
Gate Threshold Voltage
500
2
4
25
250
±100
12
0.415
0.900
0.515
A
(V
DS
= V
GS
, I
D
= 250µA)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
=
±20V,
V
DS
= 0V)
On State Drain Current
2
µA
nA
Amps
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
2
2
2
Drain-Source On-State Resistance
R
DS
(ON)
Drain-Source On-State Resistance
Drain-Source On-State Resistance
(V
GS
= 10V, I
D
= 8.0A)
(V
GS
= 10V, I
D
= 8.0A, T
C
= 125°C)
(V
GS
= 10V, I
D
= 12.0A)
Ohms
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
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051-5015 Rev D
ADPOW [ ADVANCED POWER TECHNOLOGY ]
