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APT1001RBVR 参数 Datasheet PDF下载

APT1001RBVR图片预览
型号: APT1001RBVR
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS V是新一代高压N沟道增强型功率MOSFET 。 [Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.]
分类和应用: 晶体晶体管开关脉冲高压局域网
文件页数/大小: 4 页 / 72 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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APT1001RBVR
20
I
D
, DRAIN CURRENT (AMPERES)
VGS=6V, 10V & 15V
I
D
, DRAIN CURRENT (AMPERES)
20
VGS=15V
16
VGS=6V & 10V
5V
16
12
4.5V
8
12
4.5V
8
4
4V
3.5V
0
100
200
300
400
500
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0
40
4
4V
3.5V
0
4
8
12
16
20
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
1.5
V
GS
I
D
, DRAIN CURRENT (AMPERES)
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
TJ = +125°C
30
1.4
VGS=10V
1.2
VGS=20V
1.0
20
TJ = +125°C
10
TJ = -55°C
TJ = +25°C
0
2
4
6
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
12
0
0.8
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
10
8
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
25
I = 0.5 I [Cont.]
D
D
GS
1.15
I
D
, DRAIN CURRENT (AMPERES)
1.10
1.05
6
4
2
0
1.00
0.95
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
2.5
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
V
= 10V
-25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
0.90
-50
2.0
1.1
1.0
1.5
0.9
0.8
0.7
050-5572 Rev C
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6
-50