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APT10090BLL 参数 Datasheet PDF下载

APT10090BLL图片预览
型号: APT10090BLL
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET 。 [Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 2 页 / 73 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APT10090BLL的Datasheet PDF文件第1页  
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT10090 BLL - SLL
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
MIN
TYP
MAX
UNIT
2040
338
67
78
12
52
10
5
8
26
nC
pF
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
dv
/
rr
dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
Diode Forward Voltage
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/µs)
Peak Diode Recovery
dv
/
dt
5
L
A
IC
N
H
C
E ION
T T
E A
C M
N R
A O
V F
D N
A
I
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
R
G
= 1.6W
I
D
= I
D[Cont.]
@ 25°C
MIN
TYP
(Body Diode)
2
ns
MAX
UNIT
Amps
Volts
ns
µC
12
48
1.3
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
700
9.0
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/µs)
10
V/ns
THERMAL CHARACTERISTICS
Symbol
R
qJC
R
qJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.42
40
1
Repetitive Rating: Pulse width limited by maximum junction
3
See MIL-STD-750 Method 3471
4
Starting T = +25°C, L = 16.8mH, R = 25W, Peak I = 12A
temperature.
j
G
L
2
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
5 dv
/
numbers reflect the limitations of the test circuit rather than the
dt
device itself.
IS
£
-
ID
Cont.
di
/
dt
£
700A/µs
VR
£
VDSS TJ
£
150
°
C
[
]
APT Reserves the right to change, without notice, the specifications and information contained herein.
TO-247 Package Outline
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
3
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
1.04 (.041)
1.15 (.045)
Drain
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
8-2001
0.40 (.016)
0.79 (.031)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
19.81 (.780)
20.32 (.800)
1.22 (.048)
1.32 (.052)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Rev A
Gate
Drain
Source
Heat Sink (Drain)
and Leads
are Plated
2.21 (.087)
2.59 (.102)
050-7002
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT's devices are covered by one or more of the following U.S.patents:
5,256,583
4,895,810
4,748,103
5,045,903
5,283,202
5,089,434
5,231,474
5,182,234
5,434,095
5,019,522
5,528,058
5,262,336