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APT1201R5BVFR 参数 Datasheet PDF下载

APT1201R5BVFR图片预览
型号: APT1201R5BVFR
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS V [POWER MOS V]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 4 页 / 144 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APT1201R5BVFR的Datasheet PDF文件第1页浏览型号APT1201R5BVFR的Datasheet PDF文件第2页浏览型号APT1201R5BVFR的Datasheet PDF文件第4页  
Typical Performance Curves
20
VGS=5.5V, 6V, 7V, 10V &15V
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
20
5V
APT1201R5BVFR_SVFR
VGS=5.5V, 6V, 7V, 10V &15V
5V
16
16
12
12
8
4.5V
8
4.5V
4
4V
0
100
200
300
400
500
600
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0
4
4V
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
20
I
D
, DRAIN CURRENT (AMPERES)
TJ = -55°C
TJ = +25°C
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
1.4
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
16
1.3
12
1.2
VGS=10V
VGS=20V
8
TJ = +125°C
TJ = +25°C
TJ = -55°C
1.1
4
1.0
0
2
4
6
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
10
I
D
, DRAIN CURRENT (AMPERES)
0
0.9
0
5
10
15
20
25
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.15
1.10
1.05
1.00
0.95
0.90
0.85
8
6
4
2
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
0
25
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
-50
2.5
I = 0.5 I [Cont.]
D
D
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
V
GS
= 10V
2.0
1.1
1.0
0.9
0.8
0.7
0.6
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
050-5843 Rev A
3-2004