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APT12080JVFR 参数 Datasheet PDF下载

APT12080JVFR图片预览
型号: APT12080JVFR
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS V [POWER MOS V]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 4 页 / 117 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APT12080JVFR的Datasheet PDF文件第1页浏览型号APT12080JVFR的Datasheet PDF文件第3页浏览型号APT12080JVFR的Datasheet PDF文件第4页  
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT12080JVFR
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 0.6Ω
MIN
TYP
MAX
UNIT
pF
6500
530
250
325
29
145
16
12
59
12
7800
740
375
485
45
215
32
24
90
24
ns
nC
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
dv
/
dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
1
2
MIN
TYP
MAX
UNIT
Amps
Volts
V/ns
ns
µC
Amps
15
60
1.3
18
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
(Body Diode)
(V
GS
= 0V, I
S
= -I
D
[Cont.])
dt
5
dv
/
t
rr
Q
rr
I
RRM
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
350
700
2
6
12
22
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
V
Isolation
Torque
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
MIN
TYP
MAX
UNIT
°C/W
Volts
0.28
40
2500
13
lb•in
3
See MIL-STD-750 Method 3471
4
Starting T = +25°C, L = 22.22mH, R = 25Ω, Peak I = 15A
temperature.
j
G
L
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
5
I
I [Cont.],
di
/
= 100A/µs, T
150°C, R = 2.0Ω V = 200V.
S
D
j
G
R
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
1
Repetitive Rating: Pulse width limited by maximum junction
0.3
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
D=0.5
0.1
0.2
0.05
0.1
0.05
PDM
4-2004
0.01
0.005
Note:
0.02
0.01
SINGLE PULSE
t1
t2
Peak TJ = PDM x Z
θJC
+ TC
Duty Factor D = t1/t2
050-5842 Rev A
0.001
10
-5
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4