APT12080B2VFR
APT12080LVFR
POWER MOS V
®
FREDFET
1200V 16A 0.800
Ω
Power MOS V
®
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
T-MAX™
TO-264
• Faster Switching
• Lower Leakage
• Avalanche Energy Rated
• Popular
T-MAX™
or TO-264
Package
FREDFET
D
G
S
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT12080B2VFR_LVFR
UNIT
Volts
Amps
1200
16
64
±30
±40
520
4.16
-55 to 150
300
16
50
4
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Volts
Watts
W/°C
°C
Amps
mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT
Volts
1200
0.800
250
1000
(V
GS
= 10V, I
D
= 8A)
Ohms
µA
050-5840 Rev A
2-2006
Zero Gate Voltage Drain Current (V
DS
= 1200, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 960V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
=
2.5mA)
±100
2
4
nA
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
ADPOW [ ADVANCED POWER TECHNOLOGY ]
