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APT150GN120J 参数 Datasheet PDF下载

APT150GN120J图片预览
型号: APT150GN120J
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT [IGBT]
分类和应用: 晶体晶体管功率控制瞄准线双极性晶体管局域网
文件页数/大小: 6 页 / 421 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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TYPICAL PERFORMANCE CURVES
®
APT150GN120J
1200V
APT150GN120J
E
G
C
E
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
CE(ON)
and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
CE(ON)
temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
SO
2
T-
27
ISOTOP
®
"UL Recognized"
file # E145592
• Trench Gate: Low V
CE(on)
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability
1200V Field Stop
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT150GN120J
UNIT
Volts
1200
±30
215
99
450
450A @ 1200V
625
-55 to 150
300
Amps
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 6mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 6mA, T
j
= 25°C)
MIN
TYP
MAX
Units
1200
5.0
1.4
5.8
1.7
2.08
100
2
6.5
2.1
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 150A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 150A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
2
Volts
I
CES
I
GES
R
G(int)
Gate-Emitter Leakage Current (V
GE
= ±20V)
Integrated Gate Resistor
600
5
nA
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7608
Rev B
11-2005
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
µA
TBD